STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 description STN454D is the nchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos tre nch technology. the STN454D has been designed specially to improve the overall effi ciency of dc/dc converters using either synchronous or conventional switching pwm co ntrollers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 to-251 part marking y: year code a: process code feature 40v/12.0a, r ds(on) = 25m (typ.) @v gs = 10v 40v/6.0a, r ds(on) = 27m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to252,to251 package design
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 40 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 12.0 10.0 a pulsed drain current idm 30 a continuous source current (diode conduction) is 12 a power dissipation ta=25 ta=70 pd 50 25 w operation junction temperature tj 150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 60 /w
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,id=10ma 40 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =32v,v gs =0v 1 ua v ds =32v,v gs =0v t j =85 5 drainsource on resistance r ds(on) v gs =10v,i d =12a v gs =4.5v,i d =6a 25 27 m forward transconductance gfs v ds =5v,i d =12a 25 s diode forward voltage v sd i s =1.0a,v gs =0v 1.2 v dynamic total gate charge q g v ds =10v,v ds =20 i d 12a 11 nc gatesource charge q gs 4.8 gatedrain charge q gd 1.8 input capacitance c iss v ds =20v,vgs=0v f=1mhz 850 pf output capacitance c oss 110 reverse transfercapacitance c rss 75 turnon time t d(on) tr v dd =20v,r l = 4 i d =5.0a,v gen =10v r g =1 6 12 ns 10 20 turnoff time t d(off) tf 20 36 6 12
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 typical characterictics
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 typical characterictics
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 typical characterictics
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 gate charge test circuit & waveform tesistive switching test circuit & waveforms
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 unclamped inductive switching (uis) test circuit & waveforms diode tec0very test circuit & waveforms
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 to-252-2l package outline sop-8p
STN454D n channel enhancement mode mosfet 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN454D 2009. v1 to-251 package outline sop-8p
|
